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| Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 q q Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 200 200 150 180 6 2 1 25 2 150 -55 to +150 Unit V 16.70.3 14.00.5 Parameter Collector to base voltage Collector to 2SD1772 2SD1772A 2SD1772 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1772A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C Solder Dip s Absolute Maximum Ratings 4.0 7.50.2 s Features 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1772 2SD1772A (TC=25C) Symbol ICBO IEBO VCEO VEBO hFE1* hFE2 VBE VCE(sat) fT Cob Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 VCE = 10V, IC = 100mA VCE = 10V, IC = 300mA VCE = 10V, IC = 300mA IC = 500mA, IB = 50mA VCE = 10V, IC = 100mA, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 27 150 180 6 60 50 1 1 V V MHz pF 240 min typ max 50 50 Unit A A V V Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 1 Power Transistors PC -- Ta 40 1.6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2W) (1) TC=25C 1.4 IB=20mA 2SD1772, 2SD1772A IC -- VCE 4 VCE=10V IC -- VBE Collector power dissipation PC (W) 35 30 25 20 15 10 5 (3) 0 0 20 40 (2) Collector current IC (A) 1.2 1.0 10mA 0.8 0.6 4mA 0.4 2mA 0.2 0 1mA 8mA 6mA Collector current IC (A) 3 25C 2 TC=100C -25C 1 0 0 4 8 12 16 20 24 0 0.4 0.8 1.2 1.6 60 80 100 120 140 160 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 1000 hFE -- IC 1000 VCE=10V fT -- IC VCE=10V f=1MHz TC=25C Forward current transfer ratio hFE 3 TC=100C 300 TC=100C 25C Transition frequency fT (MHz) 0.3 1 3 300 100 30 10 3 1 0.3 0.1 0.01 0.03 1 100 -25C 0.3 25C -25C 30 0.1 10 0.03 3 0.01 0.01 0.03 0.1 0.3 1 3 1 0.01 0.03 0.1 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 10 3 ICP 102 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Collector current IC (A) 1 0.3 0.1 0.03 0.01 0.003 0.001 1 IC 1ms 10ms DC Thermal resistance Rth(t) (C/W) t=0.5ms 10 (2) 1 10-1 2SD1772A 2SD1772 3 10 30 100 300 1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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